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CSUN-HP-S156-Dia200-BB3
TYPE OF CELL a(mn) b(mn) c(mn) d(mn) e(mn) f(mn) g(mn) h(mn) i(mn)
CSUN-HP-S156-Dia200-BB3 156.0±0.50 52.0±0.05 26.0±0.50 1.70±0.25 1.50±0.05 1.0±0.25 2.80±0.05 200.0±1.0 5.0±0.50
CSUN-SE-S156-Dia200-BB3
comments：
a---Side length of the cell;
b---Center to center space for front busbars(backside electrodes);
c---Space from front busbars(backside electrode)centers to cell edge;
d---Space from front silver line edge to cell edge;
e---Width of front busbars width;
f---Space from Al edge to cell edge;
g---Width of backside electrode width;
h---Diagonal length of the cell;
i---Space from backside electrode end to cell edge.
 
Electric characteristics
Standard test conditions(STC)
Light intensity:Standard intensity 1000 W/m2,Spectrum:AM1.5 spectrum,Temperature:25℃，Measurement method:IEC904-1
 
CSUN-HP-S156-Dia200-BB3
Eff(%)
Pm(Wp)
Vap(V)
lap(A)
Voc*(V)
lsc*(A)
CSUN-HP-S156-Dia200-BB3/1850
18.50
4.42
0.515
8.58
0.63
9.05
CSUN-HP-S156-Dia200-BB3/1825
18.25
4.36
0.515
8.47
0.63
8.93
CSUN-HP-S156-Dia200-BB3/1800
18.00
4.30
0.515
8.35
0.63
8.81
CSUN-HP-S156-Dia200-BB3/1775
17.75
4.24
0.515
8.24
0.62
8.82
CSUN-HP-S156-Dia200-BB3/1750
17.50
4.18
0.515
8.12
0.62
8.70
CSUN-HP-S156-Dia200-BB3/1725
17.25
4.12
0.515
8.00
0.62
8.57
CSUN-HP-S156-Dia200-BB3/1700
17.00
4.06
0.515
7.89
0.62
8.45
CSUN-HP-S156-Dia200-BB3/1675
16.75
4.00
0.515
7.77
0.62
8.32
CSUN-HP-S156-Dia200-BB3/1650
16.50
3.94
0.515
7.66
0.62
8.20
CSUN-HP-S156-Dia200-BB3/1625
16.25
3.88
0.515
7.54
0.61
8.21
CSUN-HP-S156-Dia200-BB3/1600
16.00
3.82
0.515
7.42
0.61
8.08
CSUN-HP-S156-Dia200-BB3/1575
15.75
3.76
0.515
7.31
0.61
7.95
CSUN-HP-S156-Dia200-BB3/1550
15.50
3.70
0.515
7.19
0.61
7.83
CSUN-HP-S156-Dia200-BB3/1525
15.25
3.64
0.515
7.08
0.61
7.70
CSUN-HP-S156-Dia200-BB3/1500
15.00
3.58
0.515
6.96
0.61
7.57
CSUN-HP-S156-Dia200-BB3/1475
14.75
3.52
0.515
6.84
0.61
7.45
CSUN-HP-S156-Dia200-BB3/1450
14.50
3.46
0.515
6.73
0.60
7.44
CSUN-HP-S156-Dia200-BB3/1350
13.50
3.23
0.515
6.26
0.60
6.95
CSUN-HP-S156-Dia200-BB3/1200
12.00
2.87
0.515
5.57
0.60
6.17
CSUN-SE-S156-Dia200-BB3
Eff(%)
Pm(Wp)
Vap(V)
lap(A)
Voc*(V)
lsc*(A)
CSUN-SE-S156-Dia200-BB3/1900
19.00
4.54
0.520
8.73
0.63
9.24
CSUN-SE-S156-Dia200-BB3/1875
18.75
4.48
0.520
8.62
0.63
9.12
CSUN-SE-S156-Dia200-BB3/1850
18.50
4.42
0.520
8.50
0.63
8.99
CSUN-SE-S156-Dia200-BB3/1825
18.25
4.36
0.520
8.39
0.63
8.87
CSUN-SE-S156-Dia200-BB3/1800
18.00
4.30
0.520
8.27
0.63
8.75
CSUN-SE-S156-Dia200-BB3/1775
17.75
4.24
0.520
8.16
0.62
8.77
CSUN-SE-S156-Dia200-BB3/1750
17.50
4.18
0.520
8.04
0.62
8.64
CSUN-SE-S156-Dia200-BB3/1725
17.25
4.12
0.520
7.93
0.62
8.52
CSUN-SE-S156-Dia200-BB3/1700
17.00
4.06
0.520
7.81
0.62
8.40

 
Note:Test condition are STC;Test method according to IEC904-1;Tolerance Efficiency 5% rel;Classify cells with the lap at the constant Uap=0.515v
*These column gives typical value of production performance,Just for reference
 

 

  
 
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